NSB13ANT3G
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ° C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ° C
Measured Zero Lead Length (Note 2)
Derate Above 75 ° C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ T A = 25 ° C
Derate Above 25 ° C
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
T J , T stg
Value
600
3.0
40
25
0.55
4.4
226
-65 to +150
Unit
W
W
mW/ ° C
° C/W
W
mW/ ° C
° C/W
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non-repetitive at maximum I PPM and V CM , see electrical characteristics.
2. 1 ″ square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I R V F
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
Forward Current
Forward Voltage @ I F
I PP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Zener Voltage (Note 5)
Reverse Leakage Current
Clamping Voltage
Conditions
IT = 1 mA
V RWM = 13 V
I PPM = 27.9 A
Symbol
V BR
I R
V CM
Min
14.4
Typ
15.15
Max
15.9
5.0
21.5
Unit
V
m A
V
(Per Figure 1, Note 6)
Forward Peak Voltage
I F = 30 A
V F
3.5
V
(Note 4)
Capacitance
V R = 0 V, f = 1 MHz
C typ
1160
pF
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non-repetitive duty cycle.
5. VZ measured at pulse test IT at an ambient temperature of 25 ° C.
6. Absolute Maximum Peak Current, I PPM .
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